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AON4705L P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AON4705L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck converter applications. -RoHS Compliant -Halogen Free
Features
VDS (V) = -20V ID = -4A (VGS = -4.5V) RDS(ON) < 65m (VGS = -4.5V) RDS(ON) < 85m (VGS = -2.5V) RDS(ON) < 110m (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<0.5V @ 1A
DFN 3x2 Top View Pin 1 Bottom D A A S G 1 2 3 4 8 7 6 5 K K D D K
G S A
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current
B
MOSFET -20 8 -4 -3.2 -15
Schottky
Units V V A
VGS TA=70C ID IDM VKA TA=25C TA=70C TA=25C IF IFM TA=70C PD TJ, TSTG Symbol RJA RJL RJA RJL
Schottky reverse voltage Continuous Forward Current A Pulsed Forward Current B Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C
20 1.9 1.2 1.7 1.1 -55 to 150 Typ 51 88 28 66 95 40 7 0.96 0.62 -55 to 150 Max 75 110 35 80 130 50
V A
W C Units C/W
C/W
Alpha & Omega Semiconductor, Ltd.
AON4705L
Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-3.5A VGS=-1.8V, ID=-3A gFS VSD IS Forward Transconductance VDS=-5V, ID=-4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.5 -15 51 64 65 83 12 -0.7 -1 -2 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 70 15 8.5 VGS=-4.5V, VDS=-10V, ID=-4A 1.2 2.1 7.2 VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 IF=-4A, dI/dt=100A/s 36 53 56 37 27 0.4 0.5 0.2 20 44 11 2.5 14 49 23 11 745 85 110 65 -0.66 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA pF ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1A Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max.
2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating.
Rev 0. Aug 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4705L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 -4.5V 20 20 -3.0V -2.5V VDS=-5V 16
-ID (A)
15
-ID(A) 8
-2.0V
12
10 VGS=-1.5V 5
125C
4 25C
165
0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5
0 0 0.5 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 1 3
90 80 RDS(ON) (m) VGS=-2.5V 70 60 VGS=-4.5V Normalized On-Resistance
1.4 1.3 1.2 1.1 1 0.9 0 2 4 6 8 10 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID=-4A 1E+01 1E+00 1E-01 125C 25C VGS=-4.5V ID=-4A VGS=-2.5V ID=-3.5A
VGS=-1.8V ID=-3A
50 40
180
140 RDS(ON) (m)
100
-IS (A) 8 10
125
1E-02 1E-03
60 25C 20 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4705L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics VDS=-10V ID=-4A Capacitance (pF) 1400 1200 1000 800 600 400 Crss Coss Ciss
165
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
20 100s 10s 1ms 10ms Power (W) 15 TJ(Max)=150C TA=25C
-ID (Amps)
10.0
10
1.0
1s DC
5
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4705L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
1.0E+01 125C Capacitance (pF) 1.0E+00 IF (Amps) 80 60 40 20 25C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (Volts) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 f = 1MHz
1.0E-01
1.0E-02
0.5
1.0E-02
0.4 VF (Volts) IF=0.5A 0.3
Leakage Current (A)
1.0E-03
1.0E-04
VR=16V
0.2
1.0E-05
0.1 0 25 50 75 100 Temperature (C) 125 150
1.0E-06 0 25 50 75 100 125 150 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature
Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=80C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4705L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
VDC
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
td(on)
Rg Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
Q rr = - Idt
DUT
Vds -
Isd
L
Vgs Ig
VDC
+ Vdd -Vds
Alpha & Omega Semiconductor, Ltd.
+
Vgs
DUT
VDC
-
+
t on tr t d(off) t off tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
Vds
10%
Vgs
t rr
-Isd
-I F
dI/dt
-I RM
Vdd
www.aosmd.com

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